The global silicon carbide (SiC) market is driven by a number of factors. This study demonstrates how crucial thorough analysis is and how much it influences the caliber of information given to readers. In addition, the report considers the impact of the new COVID-19 pandemic on the Silicon Carbide (SiC) market and provides a clear evaluation of the anticipated market fluctuations over the course of the forecast period.
The Global Silicon Carbide (SiC) Market valued at USD 993,500 million is to reach a value of USD 3441,120 million in 2033, growing at a CAGR of 16.80%.
Silicon carbide is used as a deoxidizing agent in the steel industry & it is the prime raw material in refractories production. The refractories made of Silicon Carbide (SiC) release towering thermal conductivity that is 10 times higher than fireclay refractories. Therefore, the evolvement in steel production is likely to propel the demand for refractories, which in turn is expected to augment the growth of the market in near future.
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Furthermore, the growing utilization of silicon carbide in electric and hybrid electric vehicles (EV/HEV), as well as in automobile charging infrastructure, rail, motor drives, power supplies, and uninterruptible power supplies (UPS) which expected to accelerate the market growth over the forecast period.
In-depth analysis of the market’s growth drivers, possible obstacles, distinctive trends, and opportunities is provided in the Silicon Carbide (SiC) market report, enabling readers to fully understand the market’s environment. Included in the report are major prime key manufacturers, market share, stock calculations and figures, contact details, sales, capacity, production, cost, price, revenue, and business profiles. The Silicon Carbide (SiC) industry report’s primary goal is to provide important insights on market potential, growth rates, competition positioning, current trends, and alternative pertinent statistics.
Segmental Analysis of Global Silicon Carbide (SiC) Market:
To Key Players
Infineon Technologies AG, CREE, INC., ROHM Co. Ltd., STMicroelectronics N.V., Fuji Electric Co. Ltd., ON Semiconductor, General Electric Company, Toshiba Corporation, Renesas Electronics Corporation and Microchip Technology Incorporated.
Based on Device Type
SIC Discrete Device is further segmented into SIC Diode, SIC MOSFET and SIC Module. SIC Discrete Device is expected to dominate the market, during the analysis period.
Based on Vertical
The electrical segment is estimated to post a fast revenue growth rate due to the increasing adoption of power modules in advanced semiconductor devices. Semiconductors built on silicon carbide hold a wider band-gap, superior thermal conductivity and enhanced critical electric field.
Geography Analysis of Global Silicon Carbide (SiC) Market
The Global Silicon Carbide market is further segmented into five major countries- North America, Europe, South America, Asia-pacific and Middle East and Africa. The market in APAC held the largest size and is estimated to continue to do so during the forecast period. China, Japan, South Korea, and India are the major markets for EVs or HEVs in APAC.
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